| PART |
Description |
Maker |
| 02CZ3.6-Z 02CZ3.6-X 02CZ8.2-Z 02CZ8.2-X 02CZ8.2-Y |
TOSHIBA Zenzer Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| HN1D01F-14 |
TOSHIBA Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| CRZ24 CRZ27 CRZ10 CRZ11 CRZ12 CRZ13 CRZ15 CRZ16 CR |
From old datasheet system
TOSHIBA Zener Diode Silicon Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 1SV239-14 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| TPCF8B0107 |
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
|
Toshiba Semiconductor
|
| U20GL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| U20DL2C53A |
High Efficiency Diode Stack (HED) Silicon Epitaxial Type Switching Mode Power Supply Application Converter&Chopper Application
TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| U20GL2C53A |
TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
